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PTF 10138 60 Watts, 860-960 MHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10138 is a 60-watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.5 dB Typ - Efficiency = 48% Min Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Available in Package 20251 as PTF 10139
* * * * * *
Typical Output Power & Efficiency vs. Input Power
70 Output Power 60 70 Drain Efficiency (%) X 60 Efficiency 50 40 80
e
A -1 2
Output Power (Watts)
50 40 30 20 10 0 0 1 2 3 4
1013 3456 8 270
0
Package 20256
VDD = 28 V IDQ = 500 mA f = 960 MHz
30 20 10
e
123
Input Power (Watts)
Also available in Package 20251
101 4 5 6 39 005
5
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
11.5 60 48 --
Typ
12.5 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10138
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS IGSS VGS(th) gfs
Min
65 -- -- 3.0 --
Typ
-- -- -- -- 2.8
Max
-- 1.0 1 5.0 --
Units
Volts mA mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS ID TJ PD
Value
65 20 7 200 194 1.11 -65 to 150 0.9
Unit
Vdc Vdc Adc C Watts W/C C C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Gain (dB) 13 80
Broadband Test Fixture Performance
90 14 60 50 40 Gain (dB)
14
Output Power & Efficiency
13 12
VDD = 28 V Gain
12 11 10 9 840
Output Power (W) 60 50 40 960
Gain
IDQ = 500 mA
70
11 10 9
VDD = 28 V IDQ = 500 mA POUT = 60 W
30 - 20 5 -15 10
Efficiency (%)
Return Loss (dB) 8 920 930 940 950
860
880
900
920
940
-25 0 960
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency
Efficiency (%)
e
Power Gain vs. Output Power
14 75
PTF 10138
Output Power vs. Supply Voltage
Output Power (Watts)
IDQ = 500 mA
Power Gain (dB)
13 IDQ = 320 mA 12 IDQ = 225 mA 11
70 65 60 55 50
VDD = 28 V f = 960 MHz
IDQ = 500 mA f = 960 MHz
24 26 28 30 32
10 0 1 100
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-20 140 120
Capacitance vs. Supply Voltage
24 20
VDD = 28 V
-30
3rd Order
Cds & Cgs (pF)
IDQ = 500 mA f1 = 959.90 MHz f2 = 960.00 MHz
Cgs
VGS = 0 V f = 1 MHz
100 80 60 40 20
IMD (dBc)
-40
5th
Cds
12 8 4
-50
7th
-60 0 10 20 30 40 50 60 70
0 0 10 20 30
Crss
40
0
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bias Voltage vs. Case Temperature
1.04 Gate-Source Voltage (V) 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 Case Temperature (C) 130
0.4 1.364 2.328 3.292 4.256 5.22
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
16
PTF 10138
Impedance Data
VDD = 28 V, POUT = 60 W, IDQ = 500 mA
e
Z0 = 10 W
0.4 5
Z Source
Z Load
0. 05
G
--->
E RA
S
TO R
TOW AR D GEN
Z Source
960 MHz
0.1
Frequency
MHz 850 860 900 920 960 R
Z Source W
jX 0.40 0.56 0.80 0.90 1.10 R 0.60 0.56 0.55 0.58 0.65
Z Load W
jX 0.74 0.72 0.95 1.10 1.30 2.35 2.20 1.80 1.80 1.80
- WAVELE NGT HS
0.0
0.1
0.2
0.3
0.4
TOW ARD LOAD NG THS
0.1
Typical Scattering Parameters
(VDS = 28 V, ID = 1.5 A)
f (MHz)
300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S11 Mag
0.941 0.949 0.958 0.968 0.975 0.973 0.974 0.982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 0.990 0.991 0.986
S21 Ang
-175 -176 -178 -179 -179 180 179 178 177 177 176 175 175 174 173 173 172 171 171 171 170 169 169 169 168
S12 Ang
36.8 32.7 28.3 24.7 22.3 18.0 14.6 10.5 6.38 3.31 0.641 0.228 0.643 -0.107 -0.098 -0.827 -1.69 -2.59 -3.43 -3.76 -4.91 -4.94 -5.51 -5.77 -5.99
A
VE LE
S22 Ang
-82.1 -82.7 -83.6 -82.9 -83.4 -78.3 -71.0 -19.9 44.0 68.8 71.9 70.1 76.6 79.0 81.0 80.6 78.5 76.4 76.2 76.6 76.4 73.3 69.4 67.2 66.3
Mag
2.70 2.09 1.71 1.40 1.20 1.03 0.892 0.788 0.671 0.576 0.489 0.425 0.378 0.342 0.316 0.294 0.264 0.245 0.228 0.211 0.192 0.179 0.173 0.159 0.146
Mag
0.028 0.022 0.017 0.013 0.009 0.006 0.003 0.001 0.003 0.004 0.007 0.008 0.010 0.011 0.014 0.016 0.018 0.020 0.022 0.023 0.025 0.028 0.030 0.029 0.030
Mag
0.993 0.990 0.991 0.994 0.998 0.996 0.996 0.996 0.997 0.999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985
Ang
-175 -176 -178 -179 -179 -180 180 179 178 178 177 176 176 176 175 175 174 173 173 173 173 172 172 171 171
4
0.5
850 MHz
0. 4
D
Z Load
960 MHz 850 MHz
5 0.
0.3
0 .2
e
Test Circuit
PTF 10138
Test Circuit Schematic for f = 960 MHz
l1 l2 l3 l4 l5 l6
D.U.T.
PTF 10138 0.207 l 960 MHz 0.075 l 960 MHz 0.158 l 960 MHz 0.214 l 960 MHz 0.015 l 960 MHz 0.214 l 960 MHz
Microstrip 50 W Microstrip 15.7 W Microstrip 5.1 W Microstrip 8.3 W Microstrip 50 W Microstrip 50 W
C1 C2, C3, C4, C6 C5 C7 C8 L1 R1, R2, R3 Circuit Board
3.0 pF Capacitor 36 pF Capacitor 0.1 mF, 50 V Capacitor 100 mF, 50 V Capacitor 0.3 pF Capacitor 4 Turns, 22 AWG, .120" I.D. 220 W, 1/4 W Resistor
100 B 3R0 100 B 360 Digi-Key P4525-ND Digi-Key P5182-ND ATC 100 B N/A Digi-Key 220 QBK-NO 0.031" Thick, er = 4.0, AlliedSignal, G200, 2 oz. copper
Placement Diagram (not to scale)
5
PTF 10138
e
Artwork (not to scale)
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10138 Uen Rev. B 11-29-00
6

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